Semiconductor laser based on matrix, array or single triangle optical cavity with spatially distributed current injection
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United States of America Patent
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Apr 4, 2006
Grant Date -
Jul 3, 2003
app pub date -
Jan 3, 2002
filing date -
Jan 3, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The invention provides a method and device for light generation wherein the device comprises a lower electrode, a substrate formed on the lower electrode, a triangle mesa structure formed on the substrate for lateral confinement of light, a triangle optical cavity formed in the mesa structure, an upper electrode formed on the mesa structure, and a plurality of contact spots formed on the upper electrode corresponding to the maxima of optical field intensity for at least one optical mode on a lateral plane in the triangle optical cavity. Another embodiment of the device according to the invention further comprises a plurality of triangle mesa structures, along with a light output structure for directing and controlling light output from the device, which are formed on the substrate in various topologies such as a matrix or an array.
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