Methods for programming read-only memory cells and associated memories

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United States of America Patent

PATENT NO 7023060
SERIAL NO

09224756

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Abstract

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A method for programming a read-only memory cell including a transistor whose source and drain, which have a second type of doping, are formed in a semiconductor substrate with a first type of doping, includes a step of carrying out a contradoping in a region of the source, the region being adjacent to the conduction channel 4, to make it a region with the first type of doping so as to prevent a transistor effect from occurring.

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Patent Owner(s)

Patent OwnerAddress
SGS-THOMSON MICROELECTRONICS S AGINTILLY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fournel, Richard Pierre Chemin de Fontanette, FR 6 15

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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges651199722376222132986546322210701 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +01002003004005006007008009001000110012001300

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