Methods for programming read-only memory cells and associated memories
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United States of America Patent
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Apr 4, 2006
Issued Date -
N/A
app pub date -
Jan 4, 1999
filing date -
Jul 31, 1995
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Abstract
A method for programming a read-only memory cell including a transistor whose source and drain, which have a second type of doping, are formed in a semiconductor substrate with a first type of doping, includes a step of carrying out a contradoping in a region of the source, the region being adjacent to the conduction channel 4, to make it a region with the first type of doping so as to prevent a transistor effect from occurring.
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
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SGS-THOMSON MICROELECTRONICS S A | GINTILLY |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
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Fournel, Richard Pierre | Chemin de Fontanette, FR | 6 | 15 |
# of filed Patents : 6 Total Citations : 15 |
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- 19 Age
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Maintenance Fees
Fee | Large entity fee | small entity fee | micro entity fee | due date |
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Fee | Large entity fee | small entity fee | micro entity fee |
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Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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Aug 18, 1997 | F | Filing | |
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