Si/C superlattice useful for semiconductor devices

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United States of America Patent

PATENT NO 7023010
APP PUB NO 20040227165A1
SERIAL NO

10823990

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Abstract

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A Si/C superlattice useful for semiconductor devices comprises a plurality of epitaxially grown silicon layers alternating with carbon layers respectively adsorbed on surfaces of said silicon layers. Structures and devices comprising the superlattice and methods are described.

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Patent Owner(s)

Patent OwnerAddress
NANODYNAMICS INCBUFFALO NY 14203

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Tsu, Raphael Cornelius, NC 17 981
Wang, Chia Gee New York, NY 6 76

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