Method for forming quantum dots using metal thin film or metal powder
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United States of America Patent
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Apr 4, 2006
Grant Date -
May 13, 2004
app pub date -
Oct 29, 2003
filing date -
Oct 30, 2002
priority date (Note) -
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Abstract
Disclosed herein is a method for forming quantum dots, comprising the steps of (a) depositing a metal thin layer onto a substrate, (b) coating a dielectric precursor onto the metal thin layer, and (c) stepwisely heating the resultant substrate; or a method for forming quantum dots, comprising the steps of (a) mixing a dielectric precursor diluted in a solvent and a metal powder and stirring the mixture, (b) coating the mixture onto a substrate, and (c) heating the resultant substrate. The method can easily control the size, density and uniformity of metal oxide quantum dots.
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