Method of manufacturing a semiconductor device
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United States of America Patent
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Apr 4, 2006
Grant Date -
Jul 1, 2004
app pub date -
Dec 18, 2003
filing date -
Dec 30, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention relates to a method of manufacturing a semiconductor device. According to the present invention, a sidewall layer containing impurities is formed on a part of gate electrode, thereby forming a low concentration source/drain electrode for a lightly doped drain (LDD) structure not by conventional ion implanting process but by out diffusion of impurities contained in the sidewall. Thus, it is made possible to minimizes damages of substrate due to ion implanting process, since the number of process of ion implantation may be naturally minimized through the above mentioned ion implantation process according to the present invention. Also, it is made possible for gate electrode to maintain its size independently, regardless of distance between source electrode and drain electrode, by excluding a role of ion implanting mask which has been performed by gate electrode.
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