Method for the manufacture of phase shifting masks for EUV lithography
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United States of America Patent
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Apr 4, 2006
Grant Date -
Apr 1, 2004
app pub date -
Sep 27, 2002
filing date -
Sep 27, 2002
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Abstract
A method for fabricating an EUV phase shift mask is provided that includes a substrate upon which is deposited a thin film multilayer coating that has a complex-valued reflectance. An absorber layer or a buffer layer is attached onto the thin film multilayer, and the thickness of the thin film multilayer coating is altered to introduce a direct modulation in the complex-valued reflectance to produce phase shifting features.
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