Apparatus and method for treating surfaces of semiconductor wafers using ozone
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United States of America Patent
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Apr 4, 2006
Issued Date -
N/A
app pub date -
Jan 23, 2003
filing date -
Oct 29, 2002
priority date (Note) -
Expired
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Abstract
An apparatus and method for treating surfaces of semiconductor wafers with a reactive gas, such as ozone, utilizes streams of gaseous material ejected from a gas nozzle structure to create depressions on or holes through a boundary layer of processing fluid formed on a semiconductor wafer surface to increase the amount of reactive gas that reaches the wafer surface through the boundary layer. The apparatus and method may be used to clean a semiconductor wafer surface and/or grow an oxide layer on the wafer surface by oxidation.
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