High voltage semiconductor device having an increased breakdown voltage relative to its on-resistance
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United States of America Patent
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Mar 28, 2006
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app pub date -
Jul 31, 2003
filing date -
Jul 31, 2003
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Abstract
A semiconductor device includes a substrate layer having a first dopant density, an epitaxial layer comprising a second dopant density formed on the substrate layer and a semiconductor switch formed on the epitaxial layer, wherein the semiconductor switch comprises an active region of the semiconductor device. A first thickness of the epitaxial layer in the active region is less than a second thickness of the epitaxial layer in a termination region formed peripherally to the active region. The increased thickness of the epitaxial layer in the termination region enables the semiconductor device to have a relatively higher breakdown voltage without increasing the on-resistance of the semiconductor switch.
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