Process for long crystal lateral growth in silicon films by UV and IR pulse sequencing
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United States of America Patent
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Mar 28, 2006
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app pub date -
Nov 13, 2003
filing date -
Nov 13, 2003
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Abstract
A process of lateral crystallization is provided for increasing the lateral growth length (LGL). A localized region of the substrate is heated for a short period of time. While the localized region of the substrate is still heated, a silicon film overlying the substrate is irradiated to anneal the silicon film to crystallize a portion of the silicon film in thermal contact with the heated substrate region. A CO2 laser may be used as a heat source to heat the substrate, while a UV laser or a visible spectrum laser is used to irradiate and crystallize the film.
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