Split source RF MOSFET device
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United States of America Patent
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Mar 21, 2006
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app pub date -
Mar 18, 2002
filing date -
Mar 18, 2002
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Abstract
An RF MOS transistor having improved AC output conductance and AC output capacitance includes parallel interdigitated source and drain regions separated by channel regions and overlying gates. Grounded tap regions contacting an underlying well are placed contiguous to source regions and reduce distributed backgate resistance, lower backgate channel modulation, and lower output conductance.
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