CMOS imager having a JFET adapted to detect photons and produce an amplified electrical signal
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United States of America Patent
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Mar 7, 2006
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app pub date -
Apr 24, 2000
filing date -
Apr 24, 2000
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Abstract
A photodetector is formed in a CMOS circuit using a junction field-effect transistor (JFET). The JFET/CMOS photodetector can be used to create an active pixel sensor for a CMOS digital imager, performing both photodetection and electrical signal amplification, allowing higher fill factors than with conventional APS imagers. A standard CMOS fabrication process is augmented with a small number of steps to integrate the JFET within the pixel, allowing the use of conventional CMOS fabrication plants.
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