Semiconductor device configured for suppressed germanium diffusion from a germanium-doped regions and a method for fabrication thereof
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United States of America Patent
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Mar 7, 2006
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app pub date -
May 12, 2004
filing date -
May 12, 2003
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Abstract
In semiconductor devices, a semiconductor device is provided which is high in reliability while suppressing changes in characteristics such as threshold voltages. In a semiconductor device which has a gate dielectric film above a semiconductor substrate and also has above the gate dielectric film a gate electrode film made of silicon germanium chosen as its main constituent material, or alternatively in a semiconductor device which has beneath the gate dielectric film a channel made of silicon as its main constituent material and which has below the channel a channel underlayer film made of silicon germanium as its main constituent material, a specifically chosen dopant, such as cobalt (Co) or carbon (C) or nitrogen (N), is added to the gate electrode and the channel underlayer film, for use as the unit for suppressing diffusion of germanium in the gate electrode or in the channel underlayer film.
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