Trench-type MOSFET having a reduced device pitch and on-resistance
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United States of America Patent
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Feb 28, 2006
Issued Date -
N/A
app pub date -
Jul 21, 2004
filing date -
Mar 21, 2001
priority date (Note) -
Expired
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Abstract
A trench-type lateral power MOSFET is manufactured by forming an n--type diffusion region, which will be a drift region, on a p--type substrate; selectively removing a part of substrate and a part of n--type diffusion region to form trenches; forming a gate oxide film of 0.05 μm in thickness in each trench; forming a polycrystalline silicon gate layer on gate oxide film; forming a p--type base region and an n+-type diffusion region, which will be a source region, in the bottom of each trench; and forming an n+-type diffusion region, which will be a drain region, in the surface portion of n--type diffusion region. The MOSFET has reduced device pitch, a reduced on-resistance per unit area and a simplified manufacturing process.
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