Semiconductor integrated circuit device
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United States of America Patent
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Feb 21, 2006
Grant Date -
May 13, 2004
app pub date -
Oct 28, 2003
filing date -
Jul 12, 1990
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A nonvolatile storage element of a single-layer gate type structure is arranged so that a floating gate is formed of a conductive layer which partly overlaps with a control gate, formed of a diffused layer, and is provided with a barrier layer covering a part of or the whole surface of the floating gate. Nonvolatile storage elements characterized as such are used for redundancy control of defects or change of functions.
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