Laser-gated and pumped multi-layer semiconductor power switch with reduced forward losses
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 21, 2006
Grant Date -
Mar 3, 2005
app pub date -
Aug 29, 2003
filing date -
Aug 29, 2003
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A laser-activated semiconductor switching device includes a semiconductor assembly including a multi-layer semiconductor structure having a first principal surface, and a laser assembly. The laser assembly includes at least one laser device and is directly connected to said first principal surface. The first principal surface includes a window area from which a metallization layer and an emitter layer of the semiconductor assembly are masked, such that laser light emitted from the laser assembly impinges through the window area directly onto a base layer of said semiconductor assembly to initiate current conduction by said switching device.
First Claim
Other Claims data not available
Family
