Method of manufacturing semiconductor device with triple gate insulating layers
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United States of America Patent
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Feb 21, 2006
Grant Date -
Feb 10, 2005
app pub date -
Aug 6, 2004
filing date -
Aug 7, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An object of the present invention is to provide a method of manufacturing a semiconductor device with triple gate insulating layers that is capable of easily obtaining thicknesses and good qualities of the gate insulating layers being opportune to multiple devices. In the present invention, gate insulating layers having thicknesses and good qualities corresponding to each of transistors can be easily formed in a semiconductor device with triple gate insulating layers by using dummy gates. Furthermore, in the present invention, a device of high integration density is easily manufactured, as gates of a high voltage device region and a middle voltage device region have finer line widths than a gate of a low voltage device region by forming them using dummy gates.
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