Passivation layer for group III-V semiconductor devices
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United States of America Patent
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Feb 14, 2006
Grant Date -
Oct 28, 2004
app pub date -
Apr 23, 2003
filing date -
Apr 23, 2003
priority date (Note) -
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Abstract
A passivation layer for a heterojunction bipolar transistor (HBT) is formed from a relatively high bandgap material that is lattice-matched to the HBT components it passivates. By selecting the passivation layer to have a higher bandgap than the HBT components, minority carriers are contained within the HBT by the passivation layer. At the same time, the lattice matching of the passivation layer ensures a robust bond that prevents the subsequent formation of dangling bonds at the exterior surfaces of the base and collector (and/or other passivated surfaces), thereby minimizing surface leakage currents.
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