Method for manufacturing a silicon sensor and a silicon sensor
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United States of America Patent
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Feb 14, 2006
Grant Date -
Apr 22, 2004
app pub date -
Mar 21, 2002
filing date -
Mar 21, 2001
priority date (Note) -
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Abstract
The invention relates to a method for manufacturing a silicon sensor structure and a silicon sensor. According to the method, into a single-crystal silicon wafer (10) is formed by etched opening at least one spring element configuration (7) and at least one seismic mass (8) connected to said spring element configuration (7). According to the invention, the openings and trenches (8) extending through the depth of the silicon wafer are fabricated by dry etch methods, and the etch process used for controlling the spring constant of the spring element configuration (7) is based on wet etch methods.
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