Semiconductor, semiconductor device, and method for fabricating the same
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United States of America Patent
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Feb 14, 2006
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N/A
app pub date -
Dec 18, 1996
filing date -
Feb 15, 1993
priority date (Note) -
Expired
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Abstract
Method of fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the silicon film. Islands, stripes, lines, or dots of nickel, iron, cobalt, or platinum, silicide, acetate, or nitrate of nickel, iron, cobalt, or platinum, film containing various salts, particles, or clusters containing at least one of nickel, iron, cobalt, and platinum are used as starting materials for crystallization. These materials are formed on or under the amorphous silicon film.
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