Gas sensor and fabrication method thereof
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United States of America Patent
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Feb 14, 2006
Grant Date -
N/A
app pub date -
Oct 17, 2000
filing date -
Oct 19, 1999
priority date (Note) -
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Abstract
A gas sensor includes a silicon substrate provided with a recess, an insulating layer, a first and a second conductive patterned layers and a detecting portion for sensing a gas which passes there through. In the gas sensor, the insulating layer is formed on a top portion of the silicon substrate which does not form the recess. The first and the second conductive patterned layers extend over the recess, thereby being apart from the silicon substrate physically. The detecting portion is formed on both portions of the first and the second conductive patterned layers.
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