Semiconductor photodetector with internal reflector
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 31, 2006
Grant Date -
Jul 8, 2004
app pub date -
Sep 12, 2003
filing date -
Oct 10, 2002
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A photodetector comprises a semiconductor substrate with entrance and reflecting faces formed at the substrate upper surface. The reflecting face forms an acute angle with the substrate surface and is positioned so that an optical beam transmitted through the entrance face into the substrate is internally reflected from the reflecting face toward the substrate upper surface. A photodetector active region is formed on the substrate upper surface and is positioned so that the reflected optical beam impinges on the active region. The photodetector may be mounted on a second substrate for receiving an optical beam from a planar waveguide formed on the second substrate or an optical fiber mounted in a groove on the second substrate.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully