Single-source precursors for ternary chalcopyrite materials, and methods of making and using the same
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United States of America Patent
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Jan 31, 2006
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N/A
app pub date -
Oct 31, 2003
filing date -
Oct 31, 2002
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Expired
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Abstract
A single source precursor for depositing ternary I-III-VI2 chalcopyrite materials useful as semiconductors. The single source precursor has the I-III-VI2 stoichiometry 'built into' a single precursor molecular structure which degrades on heating or pyrolysis to yield the desired I-III-VI2 ternary chalcopyrite. The single source precursors effectively degrade to yield the ternary chalcopyrite at low temperature, e.g. below 500° C., and are useful to deposit thin film ternary chalcopyrite layers via a spray CVD technique. The ternary single source precursors according to the invention can be used to provide nanocrystallite structures useful as quantum dots. A method of making the ternary single source precursors is also provided.
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