Method for fabricating semiconductor laser element and the same laser element
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United States of America Patent
Stats
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Jan 31, 2006
Grant Date -
Mar 11, 2004
app pub date -
Feb 5, 2003
filing date -
Aug 29, 2002
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
There is provided a semiconductor laser element which can change band gap wavelengths without change of composition of a multiple quantum well active layer and a method for fabricating a semiconductor laser module. In the method for fabricating a semiconductor laser element wherein a multiple quantum well active layer is formed on a semiconductor substrate with a crystal growth method, an insulation film is formed at the upper part of the multiple quantum well active layer, an electrode film is moreover formed on the insulation film and at least a part of the electrode film is electrically connected to the multiple quantum well active layer, distortion of the multiple quantum well active layer is controlled in the semiconductor laser element fabrication process after the process of the crystal growth method.
First Claim
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