Surface treatment for multi-layer wafers formed from layers of materials chosen from among semiconducting materials
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United States of America Patent
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Jan 31, 2006
Grant Date -
Jun 16, 2005
app pub date -
Aug 10, 2004
filing date -
Dec 10, 2003
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Abstract
This invention relates to a process for treatment of a multi-layer wafer with materials having differential thermal characteristics, the process comprising a high temperature heat treatment step that can generate secondary defects, characterised in that this process includes a wafer surface preparation step before the high temperature heat treatment step.
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