Selective etching of a protective layer to form a catalyst layer for an electron-emitting device
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United States of America Patent
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Jan 10, 2006
Grant Date -
Aug 19, 2004
app pub date -
Dec 20, 2002
filing date -
Dec 20, 2002
priority date (Note) -
Expired
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Abstract
An electron-emitting device including a protective layer that is formed on a catalyst layer to protect the catalyst layer from the deleterious environmental conditions before or during a cathode process. The present invention further includes a half etching process that is adapted to partially remove portions of the protective layer from the catalyst layer to etch the catalyst layer except carbon nano-tube growing portions. Portions of the protective layer still remain on the catalyst layer to protect the catalyst layer from the deleterious conditions from next cathode formation process.
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