Vertical-cavity surface emitting laser diode and method for producing the same
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United States of America Patent
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Dec 27, 2005
Grant Date -
Mar 24, 2005
app pub date -
Sep 22, 2003
filing date -
Sep 22, 2003
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Abstract
The present invention provides a vertical-cavity surface emitting laser (VCSEL) diode and a method for producing the same. In this method, an n-type and a p-type ohmic contact electrodes are previously disposed, and then two pairs of distributed Bragger reflectors (DBRs) are formed. At last, a permanent metal substrate is plated. According to the present invention, reflectivity of the DBRs can be preserved without damage during rapid thermal annealing, and thus brightness of the laser diode is improved.
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