Method for fabricating flash memory device
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United States of America Patent
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Dec 20, 2005
Grant Date -
Apr 7, 2005
app pub date -
Dec 30, 2003
filing date -
Oct 6, 2003
priority date (Note) -
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Abstract
A method for fabricating a flash memory includes forming a tunnel oxide layer by depositing a material with a conduction band energy level lower than that of SiO2 on a semiconductor substrate; forming a floating gate by depositing polysilicon on the tunnel oxide layer; forming an intergate dielectric layer on the floating gate; forming a control gate on the intergate dielectric layer; forming a gate electrode by patterning the tunnel oxide layer, the floating gate, the intergate dielectric layer and the control gate; and forming a source/drain region by implanting impurities into the substrate using the gate electrode as a mask.
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