Semiconductor radiation detector having voltage application means comprises InxCdyTez on CdTe semiconductor substrate
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United States of America Patent
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Dec 13, 2005
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N/A
app pub date -
Oct 29, 2003
filing date -
May 15, 2001
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Abstract
Disclosed is a semiconductor radiation detector element of Schottky barrier type, comprising: a compound semiconductor crystal including cadmium and tellurium as main components; and voltage application means for applying voltage to the compound semiconductor crystal. According to the present invention, said voltage application means includes a compound of indium, cadmium and tellurium: InxCdyTez formed on one surface of the compound semiconductor crystal. Preferably, the rate 'z' of occupation of tellurium in the compound InxCdyTez is in the range of not less than 42.9%, but not greater than 50% by ratio of number of atoms. Furthermore, preferably, the rate 'y' of occupation of cadmium in the compound InxCdyTez is in the range of not less than 0%, but not greater than 10% by ratio of number of atoms.
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