Projection exposure system for microlithography and method for generating microlithographic images
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United States of America Patent
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Dec 6, 2005
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N/A
app pub date -
Nov 9, 2004
filing date -
Mar 3, 2000
priority date (Note) -
Expired
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Abstract
An arrangement for microlithographic projection exposure at high aperture achieve a contrast increase by the polarization of the light perpendicular to the plane of incidence on the resist. Arrangements are provided which influence the tangential polarization or the linear polarization adapted to the dipole illumination in the illuminating system and in the reduction objective.
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