Semiconductor integrated device and method of fabrication thereof
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 29, 2005
Issued Date -
N/A
app pub date -
Nov 4, 1997
filing date -
Nov 14, 1995
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A diffusion layer 3a of a silicon substrate, a polycrystalline silicon material 10, or a gate electrode 12 is connected to a conductive film 8 through a titanium silicide film 6 within a contact hole 5 provided in an insulating film 4. The titanium silicide film 6 is formed by the silicide reaction between a titanium film 7 and the silicon. The upper limit of the thickness of the titanium silicide film 6, and the upper limit of the titanium film 7 are specified by the internal stress within the conductive film 8.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully