RF switch including diodes with intrinsic regions
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United States of America Patent
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Nov 22, 2005
Grant Date -
Dec 25, 2003
app pub date -
Jun 24, 2002
filing date -
Jun 24, 2002
priority date (Note) -
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Abstract
An RF switch includes first and second diodes characterized by an intrinsic region. Pin diodes and nip diodes are examples of such diodes with intrinsic regions. The diodes are stacked with facing first connections. A bias conductor extends from the first connections.
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