Method for producing high brightness LED
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United States of America Patent
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Nov 22, 2005
Grant Date -
Dec 23, 2004
app pub date -
Jul 14, 2004
filing date -
Jan 2, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention discloses a method for producing a high brightness LED (light emitting diode). The method primarily comprises steps of: a) providing a temporary substrate for epitaxy; b) forming LED epitaxial layers on said temporary substrate, wherein said LED epitaxial layers with pn junction; c) providing a permanent substrate; d) forming a layered structure between said permanent substrate and said LED epitaxial layers, wherein said layered structure has properties of reflection, adhesion, diffusion barrier and buffer; and e) forming a first electrode and a second electrode on proper position to supply enough energy for said LED epitaxial layers. The LED manufactured in accordance with the present invention can exhibit high brightness and excellent mechanical strength during manufacturing.
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