High-speed image sensing device
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United States of America Patent
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Nov 8, 2005
Grant Date -
Feb 24, 2005
app pub date -
Dec 22, 2003
filing date -
Aug 19, 2003
priority date (Note) -
In Force
status (Latency Note)
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Abstract
It is ideal to amplify voltage within a pixel to obtain sufficient sensitivity and low noise characteristics in a short storing time in order to acquire high-speed images, but no method has existed to satisfy the three requirements of the electronic shutter operation, removal of reset noise and signal voltage amplification. To solve this problem, the present invention takes the ratio of the capacitor C1 at point V1 and capacitor C2 at point V2 to be large, and transfers charges from V1 to V2, thereby enabling the signal voltage to be amplified. Moreover, the reset noise component sampled and included in VFD0 before opening TX is the same amount as the reset noise included in the voltage after TX is opened and the ΔVFD of change occurred, so the reset noise is removed by taking out the amount of change ΔVFD and amplifying the signal voltage. By returning R to 3V, the charge injection from the section V1 does not occur, thereby the voltage of V2 is held as is, and enters into storage status. Being executed in all the pixels at the same timing, these operations play the role of the electronic shutter.
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