Methods for manufacturing a light-emitting device

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United States of America Patent

PATENT NO 6962828
SERIAL NO

09711908

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Abstract

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A novel light-emitting device includes a saphire substrate with a light-emitting layer comprising InXGa1-XN, where the critical value of the indium mole fraction X is determined by a newly derived relationship between the indium mole fraction X and the wavelength λ of emitted light.

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Patent Owner(s)

Patent OwnerAddress
TOYODA GOSEI CO LTDKIYOSU-SHI
AKASAKI ISAMU38-805 1-BAN JOSHIN 1-CHOME NISHI-KU NAGOYA-SHI AICHI-KEN
AMANO HIROSHI508 2-104 YAMANOTE MEITOU-KU NAGOYA-SHI AICHI-KEN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Akasaki, Isamu 38-805, 1-ban, Joshin 1-chome, Nishi-ku, Nagoya-shi, Aichi, JP 78 2193
Amano, Hiroshi 508, 2-104, Yamanote, Meito-ku, Nagoya-shi, Aichi, JP 192 2984
Koide, Norikatsu Nagoya, JP 49 1616
Koike, Masayoshi Ichinomiya, JP 96 2365
Yamasaki, Shiro Inazawa, JP 23 441

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