Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method
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United States of America Patent
Stats
-
Nov 1, 2005
Grant Date -
Jan 27, 2005
app pub date -
Aug 16, 2004
filing date -
Jun 20, 2000
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A standard pattern of a differential value of an interference light is set with respect to a predetermined film thickness of a first member to be processed. The standard pattern uses a wavelength as a parameter. Then, an intensity of an interference light of a second member to be processed, composed just like the first member, is measured with respect to each of a plurality of wavelengths so as to obtain a real pattern of an differential value of the measured interference light intensity. The real pattern also uses a wavelength as a parameter. Then, the film thickness of the second member is obtained according to the standard pattern and the real pattern of the differential value.
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Patent Citation Ranking
- 12 Citation Count
- H01L Class
- 42.39 % this patent is cited more than
- 20 Age
