Imager with improved sensitivity
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United States of America Patent
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Oct 25, 2005
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N/A
app pub date -
Oct 21, 2003
filing date -
Oct 21, 2003
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Abstract
An imaging cell reduces recombination losses and increases sensitivity by forming a low resistance lateral path with a silicon germanium layer of a conductivity type that is sandwiched between silicon layers of the same conductivity type. The silicon germanium layer also provides a quantum well from which photo-generated electrons find it difficult to escape, thereby providing a barrier that reduces cross-talk.
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