Semiconductor device for low voltage protection with low capacitance
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United States of America Patent
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Oct 18, 2005
Grant Date -
Nov 13, 2003
app pub date -
Jun 11, 2003
filing date -
Mar 1, 1999
priority date (Note) -
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Abstract
A semiconductor thyristor device that incorporates buried region breakdown junctions laterally offset from an emitter region. By spacing the buried regions around the emitter region, current carriers emitted from the buried regions are distributed over a large area of the emitter region, thereby providing a high current capability during initial turn on of the device. In order to achieve low breakover voltage devices, the buried regions are characterized with high impurity concentrations, with the breakdown junctions located near the surface of the chip. The low voltage thyristor device minimizes the area of high dopant concentration junctions, thus minimizing the chip capacitance and permitting high speed, low voltage signal operation.
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