Image sensor comprising thin film transistor optical sensor having offset region
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United States of America Patent
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Oct 4, 2005
Grant Date -
Feb 10, 2005
app pub date -
Dec 9, 2003
filing date -
Aug 6, 2003
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Abstract
The present invention relates to an image sensor comprising an amorphous silicon thin-film transistor optical sensor which functions as an image sensor used for an X-ray photography device, a fingerprint recognition apparatus, a scanner, etc., and a method of manufacturing the image sensor. Since the thin-film transistor optical sensor according to the present invention has a high-resistance silicon region by disposing an offset region in a channel region, a dark leakage current of the optical sensor remains in a low level even under a high voltage. Therefore, it is possible to apply a high voltage to the thin-film transistor optical sensor according to the present invention so that the image senor can be sensitive to a weak light. In addition, since the storage capacitance in the image sensor is formed in a double structure, the image sensor has a high value of capacitance. Furthermore, since a lower common electrode is electrically connected to an upper common electrode, the image sensor has a stable structure.
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