Method and device for producing globular grains of high-puroty silicon having a diameter of between 50 μm and 300 μm and use of the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 4, 2005
Grant Date -
Jan 29, 2004
app pub date -
Nov 6, 2001
filing date -
Nov 30, 2000
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The invention relates to a method and a device for producing globular grains of high-purity silicon by atomising a silicon melt (6) in an ultrasonic field (10). Globular grains having a grain size of 50 μm can be produced by means of said method and device and can be used to separate high-purity silicon from silane in the fluid bed. The silicon melt (6) is fed into the ultrasonic field (10) at a distance of <50 mm in relation to a field node, and the atomised silicon leaves the ultrasonic field (10) at a temperature close to the liquidus point. The invention also relates to a use of the product produced according to the inventive method or using the inventive device, as particles for producing high-purity silicon from silane in a fluid bed.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully