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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
FUJITSU QUANTUM DEVICES LIMITED	1000 OAZA KAMISUKIAWARA SHOWA-CHO NAKAKOMA-GUN YAMANASHI 409-3883

International Classification(s)

• H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Miyazawa, Naoyuki	Yamanashi, JP	24	472
# of filed Patents : 24 Total Citations : 472

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Patent Citation Ranking

• 92 Citation Count
• H01L Class

• 96.25 % this patent is cited more than
• 20 Age

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Maintenance Fees

Fee	Large entity fee	small entity fee	micro entity fee	due date

Fee	Large entity fee	small entity fee	micro entity fee
Surcharge after expiration - Late payment is unavoidable	$700.00	$350.00	$175.00
Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
September 27, 2005	US,6949811,B2   US6949811B2	GRANTED PATENT AS SECOND PUBLICATION
October 02, 2003	US,20030183864,A1   US20030183864A1	FIRST PUBLISHED PATENT APPLICATION

Full Text

US Patent No: 6949811

Device having interdigital capacitor

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Abstract

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A device includes a transistor, and two interdigital capacitors. The transistor is located on an imaginary extension line aligned with a common electrode of the two interdigital capacitors.

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Description

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Claims

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