Two-dimensional structural transition controlled by an electric field, memory storage device thereof, and method of making a memory storage device
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United States of America Patent
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Sep 20, 2005
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Jan 6, 2005
app pub date -
Jun 9, 2004
filing date -
Jun 10, 2003
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Abstract
This invention relates to the controlled two-dimensional structural transition of a dipole monolayer at a metal, semi-conducting or insulating interface. The dipole monolayer consists of objects/molecules with a permanent electric dipole moment. A transition between the structures of the molecular layer can be performed locally and reversibly by applying an electrical field and the structures/patterns can be reversibly switched many times between two different structures/states. Both of the two structures, the ordered and the disordered structures, are intrinsically stable without the presence of the switching electrical field. This controlled switch of the local layer structure can be used to change layer properties (i.e., mechanical, electrical, optical properties). The controlled reversible modifications of the dipole monolayer structures are usable as bit assignments in data storage applications for example.
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