Method of manufacturing improved double-diffused metal-oxide-semiconductor device with self-aligned channel
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United States of America Patent
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Sep 20, 2005
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Nov 24, 2004
filing date -
Nov 24, 2004
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Abstract
The present invention relates to an integrated circuit manufacturing method for producing a double-diffused metal-oxide-semiconductor (DMOS), which utilizes a removable spacer method with a self-aligned channel to manufacture an improved DMOS with a reduced parasitic capacitance, and a high-resistance DMOS for a high power application can thus be fabricated also. Via the present invention, a faster switch with more usable operating frequencies can be achieved.
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