Apparatus for shaping thin films in the near-edge regions of in-process semiconductor substrates
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United States of America Patent
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Aug 30, 2005
Issued Date -
N/A
app pub date -
Mar 27, 2003
filing date -
Apr 26, 2002
priority date (Note) -
Expired
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Abstract
An apparatus for shaping and encapsulating near edge regions of a semiconductor wafer is described. A housing of the apparatus has a slot for receiving an edge of a wafer affixed on a rotatable chuck. At least one plasma source connected to the housing generates a flow of reactive gas towards the edge of the wafer. A channel in the housing directs a flow of diluent/quenching gas onto the wafer in close proximity to an exhaust channel for exhausting of the diluent/quenching gas and the reactive gas away from the wafer. The apparatus may also provide a plurality of plasma sources, for example, plasma sources for selectively etching of a polymer on the wafer, etching of silcon dioxide on the wafer and depositing an encapsulating silicon dioxide layer on the wafer.
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