Semiconductor wafer and its manufacturing method
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United States of America Patent
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Aug 30, 2005
Grant Date -
Mar 18, 2004
app pub date -
Sep 5, 2002
filing date -
Sep 6, 2001
priority date (Note) -
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Abstract
A method of epitaxially growing a SiC film on a Si substrate, including: (a) supplying a raw material gas containing a gas having P (phosphorus) element and a gas having B (boron) element on a Si substrate, and thereby synthesizing an amorphous BP thin film having a thickness of 5 nm or more and 100 nm or less on the Si substrate; (b) further supplying a raw material gas containing a gas having P element and a gas having B element on the Si substrate, and thereby synthesizing a cubic boron phosphide single crystal film having a thickness of 5 nm or more and 1000 nm or less on the Si substrate; and (c) supplying a gas having carbon element and a gas having silicon element on the Si substrate thereon the BP single crystal film is formed, and thereby synthesizing a beta-SiC single crystal film or an amorphous SiC film having a thickness of 1 nm or more and several hundreds nanometers or less on the cubic boron phosphide single crystal film on the Si substrate.
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