Low indium content quantum well structures
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United States of America Patent
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Aug 30, 2005
Grant Date -
Oct 14, 2004
app pub date -
Apr 11, 2003
filing date -
Apr 11, 2003
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Abstract
A method of suppression of Indium carry-over in the MOCVD growth of thin InGaAsP quantum wells, with low Indium content, on top of thick GaInAsP, with high Indium content. These quantum wells are essential in the stimulated emission of 808 to 880 nm phosphorous-based laser structures. The Indium carryover effect is larger in large multi wafer reactors and therefore is this invention focused on large multiwafer MOCVD reactors. This invention improves the quality of the quantum well, as measured by photo-luminescence spectra and uniformity of wavelength radiation.
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