Semiconductor memory with gate at least partially located in recess defined in vertically oriented semiconductor layer
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United States of America Patent
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Aug 23, 2005
Grant Date -
Dec 26, 2002
app pub date -
Jun 20, 2002
filing date -
Jun 22, 2001
priority date (Note) -
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Abstract
A semiconductor memory comprises: a first conductivity type semiconductor substrate and one or more memory cells each constituted of an island-like semiconductor layer having a recess on a sidewall thereof, a charge storage layer formed to entirely or partially encircle a sidewall of the island-like semiconductor layer, and a control gate formed on the charge storage layer, wherein at least one charge storage layer of said one or more memory cells is partially situated within the recess formed on the sidewall of the island-like semiconductor layer.
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