High frequency semiconductor device
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United States of America Patent
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Aug 16, 2005
Grant Date -
Jul 3, 2003
app pub date -
Nov 22, 2002
filing date -
Nov 29, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A high frequency semiconductor device including a high frequency semiconductor chip, comprising an active region provided on a front face side of the high frequency semiconductor chip; a covering electrode provided on the active region and connected to a ground potential; and a back face wiring provided on a back face side of the high frequency semiconductor chip. The back face wiring forms a high frequency transmission line together with the covering electrode functioning as a high frequency ground plate. A front face wiring may be provided on the front face side of the high frequency semiconductor chip to form a high frequency transmission line together with the covering electrode.
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