Ion implantation system and ion implantation method
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United States of America Patent
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Aug 16, 2005
Grant Date -
Jun 6, 2002
app pub date -
Dec 3, 2001
filing date -
Dec 6, 2000
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Abstract
In an ion implantation system including (a) an ion source (b) a mass analyzing portion, (c) an ion acceleration portion, (d) an ion beam focusing/deflecting portion, and (e) an end station chamber for implanting ions onto a semiconductor substrate. The ion source consists of plural ion sources being connected to the same mass analyzing portion in which any one of the plural ion sources is selected. Mass-separated ions from the ion source are led to the acceleration portion, and a stencil mask is arranged approximately to the semiconductor substrate in the end station chamber.
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