Method for fabricating capacitor in semiconductor device
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United States of America Patent
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Aug 9, 2005
Grant Date -
Jan 20, 2005
app pub date -
Nov 10, 2003
filing date -
Jul 15, 2003
priority date (Note) -
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Abstract
Disclosed is a method of fabricating a capacitor of a semiconductor device, which can produce an MIM capacitor in which an insulator film is formed to have a positive slope by means of a polymer, thereby preventing leakage of current in the capacitor. The method comprises the steps of: sequentially forming a first metal film, an insulator film, and a second metal film on a semiconductor substrate; patterning a second metal film to form an upper electrode; etching the insulator film using the upper electrode as a mask, and simultaneously forming a polymer at one side of the upper electrode; etching the insulator film which is not protected by the polymer, thereby removing the insulator film; and removing the polymer formed at said one side of the upper electrode.
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