Display device and method of manufacturing the same
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United States of America Patent
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Jul 19, 2005
Grant Date -
Oct 3, 2002
app pub date -
Mar 22, 2002
filing date -
Mar 30, 2001
priority date (Note) -
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status (Latency Note)
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Abstract
In a semiconductor circuit in a display device, there are provided a first gate electrode of a first MOS transistor formed on a semiconductor layer via a gate insulating film, a second gate electrode of a second MOS transistor formed on the semiconductor layer via the gate insulating film at a distance from the first gate electrode, first and second one conductivity type impurity introduced regions formed in the semiconductor layer on both sides of the first gate electrode to serve as source/drain of the first MOS transistor, and first and second opposite conductivity type impurity introduced regions formed in the semiconductor layer on both sides of the second gate electrode to serve as source/drain of the second MOS transistor. One of the first and second opposite conductivity type impurity introduced regions is formed to contact mutually to the second one conductivity type impurity introduced region.
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